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Semikron Electronic Components Datasheet

SEMiX101GD12Vs Datasheet

IGBT Modules

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SEMiX101GD12Vs pdf
SEMiX101GD12Vs
SEMiX® 13
SEMiX101GD12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 600 V
VGE 15 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
Tterminal = 80 °C
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 100 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 4 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 100 A
VGE = ±15 V
RG on = 1.5
RG off = 1.5
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3000 A/µs Tj = 150 °C
di/dtoff = 1100 A/µs
du/dtoff = 6700 V/ Tj = 150 °C
µs
per IGBT
Values
1200
159
121
100
300
-20 ... 20
10
-40 ... 175
121
91
100
300
550
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.75 2.2 V
2.2 2.5 V
0.94 1.04 V
0.88 0.98 V
8.1 11.6 m
13.2 15.2 m
5.5 6 6.5 V
0.1 0.3 mA
mA
6.0 nF
0.59 nF
0.59 nF
1100
nC
7.50
319 ns
46 ns
12.9 mJ
482 ns
68 ns
11.4 mJ
0.27 K/W
GD
© by SEMIKRON
Rev. 2 – 16.02.2011
1


Semikron Electronic Components Datasheet

SEMiX101GD12Vs Datasheet

IGBT Modules

No Preview Available !

SEMiX101GD12Vs pdf
SEMiX101GD12Vs
SEMiX® 13
SEMiX101GD12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 100 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 2900 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms to heat sink (M5)
Mt to terminals (M6)
min.
1.1
0.7
8.0
10.5
3
2.5
typ.
2.2
2.1
1.3
0.9
9.0
12.5
115
18.3
7.7
20
0.7
1
0.04
max.
2.52
2.5
1.5
1.1
10.2
13.7
0.48
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
350
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GD
2
Rev. 2 – 16.02.2011
© by SEMIKRON


Part Number SEMiX101GD12Vs
Description IGBT Modules
Maker Semikron International
Total Page 6 Pages
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