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Semikron Electronic Components Datasheet

SEMiX151GAL12E4s Datasheet

Trench IGBT Modules

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SEMiX151GAL12E4s pdf
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
232
179
150
450
-20 ... 20
10
-40 ... 175
189
141
150
450
900
-40 ... 175
189
141
150
450
900
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
6.7 7.7 m
10.0 10.7 m
5 5.8 6.5 V
0.1 0.3 mA
mA
9.3 nF
0.58 nF
0.51 nF
850 nC
5.00
GAL
© by SEMIKRON
Rev. 0 – 05.05.2010
1


Semikron Electronic Components Datasheet

SEMiX151GAL12E4s Datasheet

Trench IGBT Modules

No Preview Available !

SEMiX151GAL12E4s pdf
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 600 V
IC = 150 A
Tj = 150 °C
Tj = 150 °C
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Rth(j-c)
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
204 ns
42 ns
16.6 mJ
468 ns
91 ns
18.4 mJ
0.19 K/W
2.1 2.46 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
4.3 5.6 6.4 m
6.7 7.8 8.5 m
115 A
23 µC
8.9 mJ
0.31 K/W
2.1 2.5 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
4.3 5.6 6.4 m
6.7 7.8 8.5 m
115 A
23 µC
8.9 mJ
0.31 K/W
16 nH
0.7 m
1 m
0.075
K/W
3 5 Nm
2.5 5 Nm
Nm
145 g
493 ± 5%
3550
±2%
K
GAL
2
Rev. 0 – 05.05.2010
© by SEMIKRON


Part Number SEMiX151GAL12E4s
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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