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Semikron Electronic Components Datasheet

SEMiX202GB066HDs Datasheet

Trench IGBT Modules

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SEMiX202GB066HDs pdf
SEMiX202GB066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 3.2 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 200 A
Tj = 150 °C
Tj = 150 °C
RG on = 4.2
RG off = 4.2
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
per IGBT
Values
600
274
207
200
400
-20 ... 20
6
-40 ... 175
291
214
200
400
1000
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.7
0.9
0.85
2.8
4.3
5.8
0.15
12.3
0.77
0.37
1600
1.00
65
80
6
545
95
8
max. Unit
1.85
2.1
1
0.9
4.3
6.0
6.5
0.45
0.21
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
1


Semikron Electronic Components Datasheet

SEMiX202GB066HDs Datasheet

Trench IGBT Modules

No Preview Available !

SEMiX202GB066HDs pdf
SEMiX202GB066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 200 A
Tj = 150 °C
di/dtoff = 3900 A/µs
VGE = -8 V
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
1.4 1.60 V
1.4 1.6 V
0.9
0.75
1.5
2.3
1
0.85
2.0
2.8
205
28
1.1 V
0.95 V
2.5 m
3.3 m
A
µC
6.5 mJ
0.27 K/W
18 nH
0.7 m
1 m
0.045
K/W
3 5 Nm
2.5 5 Nm
Nm
250 g
493 ± 5%
3550
±2%
K
GB
2
Rev. 0 – 16.04.2010
© by SEMIKRON


Part Number SEMiX202GB066HDs
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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