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Semikron Electronic Components Datasheet

SEMiX703GB126HDs Datasheet

IGBT Modules

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SEMiX703GB126HDs pdf
SEMiX703GB126HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX703GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES
tpsc
Tj
VCC = 600 V
VGE 20 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 18 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 450 A
VGE = ±15 V
RG on = 1.6
RG off = 1.6
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Eoff Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200
642
449
450
900
-20 ... 20
10
-40 ... 150
561
384
450
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.7 2.10 V
2.0 2.45 V
1 1.2 V
0.9 1.1 V
1.6 2.0 m
2.4 3.0 m
5 5.8 6.5 V
5 mA
mA
32.3 nF
1.69 nF
1.46 nF
3600
nC
1.67
310 ns
60 ns
32 mJ
680 ns
135 ns
68 mJ
0.061 K/W
GB
© by SEMIKRON
Rev. 2 – 03.07.2013
1


Semikron Electronic Components Datasheet

SEMiX703GB126HDs Datasheet

IGBT Modules

No Preview Available !

SEMiX703GB126HDs pdf
SEMiX703GB126HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX703GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0 chiplevel
Tj = 25 °C
Tj = 125 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 8500 A/µs
VGE = -15 V
Tj = 125 °C
VCC = 600 V
Tj = 125 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms to heat sink (M5)
Mt to terminals (M6)
min.
0.9
0.7
1.1
1.6
3
2.5
typ.
1.6
1.6
1
0.8
1.3
1.8
580
130
60
20
0.7
1
0.04
max.
1.80
1.8
1.1
0.9
1.6
2.0
0.11
5
5
w
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
300
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GB
2
Rev. 2 – 03.07.2013
© by SEMIKRON


Part Number SEMiX703GB126HDs
Description IGBT Modules
Maker Semikron International
Total Page 5 Pages
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