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Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech

1N4730 Datasheet Preview

1N4730 Datasheet

1W SILICON PLANAR ZENER DIODES

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1N4730 pdf
CE
CHENYI ELECTRONICS
FEATURES
. Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high power rating.
. Standaards Zener voltage toerance is 10%
Add suffix"A" for 5% tolerance Other tolerance available upon
request
1N4728 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
MECHANICAL DATA
. Case: DO-41 glass case
.weight: Approx. 0.35 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
Value
1 1)
175
-65 to +175
Units
mW
ELECTRCAL CHARACTERISTICS(TA=25 )
Symbols
Min
Thermal resistance junction to ambient
RthA
Forward voltage at IF=200mA
VF
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Typ Max Units
170 1)
/W
1.2 V
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3



Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech

1N4730 Datasheet Preview

1N4730 Datasheet

1W SILICON PLANAR ZENER DIODES

No Preview Available !

1N4730 pdf
CE
CHENYI ELECTRONICS
1N4728 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
1N4728…1N4764 SILICON PLANAR ZENER DIODES
Type
Nominal
Zener
Voltage 3)
at
Test
Current
Maximum Zener Impedance 1)
at at
Maximum
reverse leakage current
Surge
current
at TA=0.25
Maximum
regulator
Current 2)
IZT
VZ V
IZT mA
IZT
ZZT
ZZK IZK
at VR
IR
mA IR A
V
mA
IZM
mA
1N4728
3.3
76
10
1N4729
3.6
69
10
400
1N4730
3.9
64
9
100 1.0 1380
1.0 1260
50 1.0 1190
276
252
234
1N4731
4.3
58
9
1N4732
4.7
53
8
500 1.0
1.0 1070
1.0 970
217
193
1N4733
5.1
49
7
550
1.0 890
178
1N4734
5.6
45
5
600
2.0 810
162
1N4735
1N4736
6.2
6.8
41
37
2
3.5
3.0 730
10
4.0 660
146
133
1N4737
1N4738
7.5
8.2
34
31
4.0
4.5
5.0 605
121
5.0
6.0 550
110
1N4739
9.1
28
5.0
1N4740
10
25
7
700
7.0 500
7.6 454
100
91
1N4741
11
23
8
8.4 414
83
1N4742
12
21
9
9.1 380
76
1N4743
13
19
10
9.9 344
69
1N4744
15
17
14
11.4 304
61
1N4745
16
15.5
16
12.2 285
57
1N4746
18
14
20
13.7 250
50
1N4747
1N4748
20
22
12.5
11.5
22
23
750
15.2 225
16.7 205
45
41
1N4749
24
10.5
25
18.2 190
38
1N4750
27
9.5
35
20.6 170
34
1N4751
30
8.5
40
22.8 150
1N4752
33
7.5
45
0.25 25.1 135
1000
5
1N4753
36
7.0
50
27.4 125
30
27
25
1N4754
39
6.5
60
29.7 115
23
1N4755
43
6.0
70
1N4756
47
5.5
80
1500
32.7 110
35.8 95
22
19
1N4757
51
5.0
95
38.8 90
18
1N4758
56
4.5
110
42.6 80
16
1N4759
62
4.0
125
2000
1N4760
68
3.7
150
47.1 70
51.7 65
14
13
1N4761
75
3.3
175
56.0 60
12
1N4762
82
3.0
200
1N4763
91
2.8
250
3000
62.2 55
69.2 50
11
10
1N4764
100
2.5
350
76.0 45
9
Notes:1) The Zener impedance is derived from the 1KHz AC voltage which results when an AC current having an RMS calue equal to 10% of the Zener
current(IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
2)Valid provided that electrodes at a distance of 10mm from case are kept at ambient temperature
3)Measured under thermal equilibriun and DC test conditions.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3


Part Number 1N4730
Description 1W SILICON PLANAR ZENER DIODES
Maker Shanghai Lunsure Electronic Tech
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