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Siemens Electronic Components Datasheet

BUZ334 Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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BUZ334 pdf
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SIPMOS ® Power Transistor
BUZ 334
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 334
VDS
600 V
ID
12 A
RDS(on)
0.5
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 12 A, VDD = 50 V, RGS = 25
L = 11.8 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3130-A2
Values
12
48
12
18
Unit
A
mJ
930
± 20
180
-55 ... + 150
-55 ... + 150
0.7
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96



Siemens Electronic Components Datasheet

BUZ334 Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

No Preview Available !

BUZ334 pdf
www.DataSheet4U.com
BUZ 334
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 7.5 A
Symbol
min.
V(BR)DSS
600
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
--
34
0.1 1
10 100
10 100
0.45
0.5
V
µA
nA
Semiconductor Group
2
07/96


Part Number BUZ334
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Maker Siemens Semiconductor Group
Total Page 9 Pages
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