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Siemens Electronic Components Datasheet

BUZ349 Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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BUZ349 pdf
BUZ 349
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 349
VDS
100 V
ID
32 A
RDS(on)
0.06
Maximum Ratings
Parameter
Continuous drain current
TC = 27 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 32 A, VDD = 25 V, RGS = 25
L = 322 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3113-A2
Values
32
128
32
15
Unit
A
mJ
220
± 20
125
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96



Siemens Electronic Components Datasheet

BUZ349 Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

No Preview Available !

BUZ349 pdf
BUZ 349
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 21 A
Symbol
min.
V(BR)DSS
100
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
3
0.1
10
10
0.05
4
1
100
100
0.06
µA
nA
Semiconductor Group
2
07/96


Part Number BUZ349
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Maker Siemens Semiconductor Group
Total Page 9 Pages
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