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Siemens Electronic Components Datasheet

BUZ73AL Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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BUZ73AL pdf
BUZ 73 AL
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 73 AL
VDS
200 V
ID
5.5 A
RDS(on)
0.6
Maximum Ratings
Parameter
Continuous drain current
TC = 37 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25
L = 3.67 mH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1328-A3
Values
5.5
22
7
6.5
Unit
A
mJ
120
± 14
± 20
40
-55 ... + 150
-55 ... + 150
3.1
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96



Siemens Electronic Components Datasheet

BUZ73AL Datasheet

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

No Preview Available !

BUZ73AL pdf
BUZ 73 AL
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 °C
VDS = 200 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 3.5 A
V(BR)DSS
200
VGS(th)
1.2
IDSS
-
-
IGSS
-
RDS(on)
-
-
1.6
0.1
10
10
0.5
-
2
1
100
100
0.6
Unit
V
µA
nA
Semiconductor Group
2
07/96


Part Number BUZ73AL
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
Maker Siemens Semiconductor Group
Total Page 9 Pages
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BUZ73AL pdf
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