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SSF7510 Datasheet Preview

SSF7510 Datasheet

MOSFET

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SSF7510 pdf
SSF7510
Feathers:
„ Advanced trench process technology
„ Special designed for Convertors and power controls
„ High density cell design for ultra low Rdson
„ Fully characterized Avalanche voltage and current
„ Avalanche Energy 100% test
Description:
The SSF7510 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.8mohm.
Application:
„ Power switching application
ID=75A
BV=75V
Rdson=7m(Typ.)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
Continuous drain current,VGS@10V
ID@Tc=100ْC
IDM
Continuous drain current,VGS@10V
Pulsed drain current
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS Single pulse avalanche energy
EAR
TJ
TSTG
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
SSF7510 TOP View (TO220)
Max.
75
70
300
150
2.0
±20
31
480
TBD
–55 to +150
Units
A
W
W/ ْC
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
Units
RθJC
Junction-to-case
— 0.83
RθJA Junction-to-ambient
62
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
ْC/W
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source breakdown voltage 75 —
Static Drain-to-Source on-resistance — 7
Gate threshold voltage
2.0 3.2
Forward transconductance
- 58
——
Drain-to-Source leakage current
——
IGSS Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
——
—V
VGS=0V,ID=250μA
10 m
VGS=10V,ID=40A
4.0 V
VDS=VGS,ID=250μA
—S
VDS=5V,ID=30A
1 VDS=75V,VGS=0V
μA
10
VDS=75V,
VGS=0V,TJ=150ْC
100 nA VGS=20V
Version : 1.0
page 1of5



Silikron
Silikron

SSF7510 Datasheet Preview

SSF7510 Datasheet

MOSFET

No Preview Available !

SSF7510 pdf
SSF7510
Gate-to-Source reverse leakage
— — -100
VGS=-20V
Qg Total gate charge
— 90
ID=30A
Qgs Gate-to-Source charge
— 14
— nC VDD=30V
Qgd
Gate-to-Drain("Miller") charge
— 24
VGS=10V
td(on) Turn-on delay time
— 18.2 —
VDD=30V
tr Rise time
td(off) Turn-Off delay time
tf Fall time
— 15.6
— 70.5
nS
ID=2A ,RL=15
RG=2.5
— 13.8 —
VGS=10V
Ciss Input capacitance
— 3150 —
VGS=0V
Coss Output capacitance
Crss Reverse transfer capacitance
— 300 — pF VDS=25V
— 240 —
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS (Body Diode)
ISM
Pulsed Source Current
(Body Diode)
.—
— 75
— 300
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
— — 1.3 V TJ=25ْC,IS=40A,VGS=0V
57 — nS TJ=25ْC,IF=75A
107 —
nC di/dt=100A/μs
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
Repetitive rating; pulse width limited by max junction temperature.
Test condition: L =0.3mH, ID = 57A, VDD = 47V
Pulse width300μS; duty cycle1.5% RG = 25ΩStarting TJ = 25°C
EAS test circuits:
BVdss
Gate charge test circuit:
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page 2of5


Part Number SSF7510
Description MOSFET
Maker Silikron
Total Page 5 Pages
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