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Simtek
Simtek

STK25CA8 Datasheet Preview

STK25CA8 Datasheet

128K x 8 AutoStore nvSRAM CMOS Nonvolatile Static RAM Module

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STK25CA8 pdf
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STK25CA8
128K x 8 AutoStore™ nvSRAM
QuantumTrap™ CMOS
Nonvolatile Static RAM Module
FEATURES
• Nonvolatile Storage without Battery Problems
• Directly Replaces 128K x 8 Static RAM, Battery-
Backed RAM or EEPROM
• 35ns and 45ns Access Times
STORE to EEPROM Initiated by AutoStore
on Power Down
RECALL to SRAM on Power Restore
• 22mA ICC at 200ns Cycle Time
• Unlimited READ, WRITE and RECALL Cycles
• 1,000,000 STORE Cycles to EEPROM
• 100-Year Data Retention Over Full Commercial
Temperature Range
• Commercial and Industrial Temperatures
• 32-Pin 600 mil Dual In-Line Module
DESCRIPTION
The Simtek STK25CA8 is a fast static RAM with a
nonvolatile, electrically erasable PROM element
incorporated in each static memory cell. The SRAM
can be read and written an unlimited number of
times, while independent nonvolatile data resides in
the EEPROM. Data transfers from the SRAM to the
EEPROM (the STORE operation) can take place auto-
matically on power down using charge stored in sys-
tem capacitance. Transfers from the EEPROM to the
SRAM (the RECALL operation) take place automati-
cally on restoration of power.
BLOCK DIAGRAM
A15 MODULE
A16
DECODER
EEPROM ARRAY
512 x 512
A5
A6 STORE
A7
A8
A9
STATIC RAM
ARRAY
RECALL
A11 512 x 512
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
COLUMN I/O
COLUMN DEC
A0 A1 A2 A3 A4 A10
STORE/
RECALL
CONTROL
VCC
POWER
CONTROL
G
E
W
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 NC
29 W
28 A13
27 A8
26 A9
25 A11
24 G
23 A10
22 E
21 DQ7
20
19
DQ6
DQ5
32 - 600 mil
18 DQ4 Dual In-Line
17 DQ3 Module
PIN NAMES
A0 - A16
W
Address Inputs
Write Enable
DQ0 - DQ7
E
Data In/Out
Chip Enable
G Output Enable
VCC
VSS
Power (+ 5V)
Ground
August 1999
6-1



Simtek
Simtek

STK25CA8 Datasheet Preview

STK25CA8 Datasheet

128K x 8 AutoStore nvSRAM CMOS Nonvolatile Static RAM Module

No Preview Available !

STK25CA8 pdf
STK25CA8
ABSOLUTE MAXIMUM RATINGSa
Voltage on Input Relative to VSS . . . . . . . . . . –0.6V to (VCC + 0.5V)
Voltage on DQ0-7. . . . . . . . . . . . . . . . . . . . . . –0.5V to (VCC + 0.5V)
Temperature under Bias . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
DC Output Current (1 output at a time, 1s duration) . . . . . . . . 15mA
Note a:
Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at condi-
tions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC CHARACTERISTICS
(VCC = 5.0V ± 10%)
SYMBOL
ICC1b
ICC2c
ICC3b
ICC4c
ISBd
IILK
IOLK
VIH
VIL
VOH
VOL
TA
PARAMETER
Average VCC Current
Average VCC Current During STORE
Average VCC Current at tAVAV = 200ns
COMMERCIAL
MIN MAX
140
125
20
22
INDUSTRIAL
MIN MAX
150
133
25
25
UNITS
mA
mA
mA
mA
Average VCC Current During AutoStore
Cycle
VCC Standby Current
(Standby, Stable CMOS Input Levels)
Input Leakage Current
18
9
±2
20 mA
9 mA
±2 µA
Off-State Output Leakage Current
±10 ±10 µA
Input Logic “1” Voltage
Input Logic “0” Voltage
Output Logic “1” Voltage
Output Logic “0” Voltage
Operating Temperature
2.2
VSS – .5
2.4
VCC + .5 2.2
0.8 VSS – .5
2.4
VCC + .5
0.8
0.4 0.4
0
70 –40
85
V
V
V
V
°C
NOTES
tAVAV = 35ns
tAVAV = 45ns
All Inputs Don’t Care, VCC = max
W (VCC – 0.2V)
All Others Cycling, CMOS Levels
All Inputs Don’t Care
E (VCC – 0.2V)
All Others VIN 0.2V or (VCC – 0.2V)
VCC = max
VIN = VSS to VCC
VCC = max
VIN = VSS to VCC, E or G VIH
All Inputs
All Inputs
IOUT = – 4mA
IOUT = 8mA
Note b: ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
Note c:
Note d:
EICC2VaIHndwIiCll Cn4otaprerotdhuecaevestraangdebcyucrruernretsntreleqvueirlsedunfotirl
the duration of the respective STORE
any nonvolatile cycle in progress has
cycles (tSTORE
timed out.
)
.
AC TEST CONDITIONS
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V
Input Rise and Fall Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤ 5ns
Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .See Figure 1
5.0V
480 Ohms
CAPACITANCEe (TA = 25°C, f = 1.0MHz)
SYMBOL
CIN
COUT
PARAMETER
Input Capacitance
Output Capacitance
MAX
20
28
UNITS
pF
pF
CONDITIONS
V = 0 to 3V
V = 0 to 3V
Note e: These parameters are guaranteed but not tested.
OUTPUT
255 Ohms
30 pF
INCLUDING
SCOPE
AND FIXTURE
Figure 1: AC Output Loading
August 1999
6-2


Part Number STK25CA8
Description 128K x 8 AutoStore nvSRAM CMOS Nonvolatile Static RAM Module
Maker Simtek
Total Page 8 Pages
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