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Simtek
Simtek

U632H16 Datasheet Preview

U632H16 Datasheet

PowerStore 2K x 8 nvSRAM

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U632H16 pdf
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Not Recommended For New Designs
U632H16
PowerStore 2K x 8 nvSRAM
Features
‡ High-performance CMOS non-
volatile static RAM 2048 x 8 bits
‡ 25 ns Access Times
‡ 12 ns Output Enable Access
Times
‡ ICC = 15 mA at 200 ns Cycle
Time
‡ Automatic STORE to EEPROM
on Power Down using external
capacitor
‡ Hardware or Software initiated
STORE
(STORE Cycle Time < 10 ms)
‡ Automatic STORE Timing
‡ 106 STORE cycles to EEPROM
‡ 100 years data retention in
EEPROM
‡ Automatic RECALL on Power
Up
‡ Software RECALL Initiation
(RECALL Cycle Time < 20 μs)
‡ Unlimited RECALL cycles from
EEPROM
‡ Single 5 V ± 10 % Operation
‡ Operating temperature ranges:
0 to 70 °C
-40 to 85 °C
‡ QS 9000 Quality Standard
‡ ESD protection > 2000 V
(MIL STD 883C M3015.7-HBM)
‡ RoHS compliance and Pb- free
Package: SOP28 (300 mil)
Description
The U632H16 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U632H16 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically erasable PROM
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
using charge stored in an external
100 μF capacitor. Transfers from
the EEPROM to the SRAM (the
RECALL operation) take place
automatically on power up. The
U632H16 combines the high per-
formance and ease of use of a fast
SRAM with nonvolatile data inte-
grity.
STORE cycles also may be initia-
ted under user control via a soft-
ware sequence or via a single pin
(HSB).
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
Pin Configuration
VCAP
n.c.
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 SOP 21
9 20
10 19
11 18
12 17
13 16
14 15
VCCX
W
HSB
A8
A9
n.c.
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Top View
August 15, 2006
STK Control #ML0046
Pin Description
Signal Name
A0 - A10
DQ0 - DQ7
E
G
W
VCCX
VSS
VCAP
HSB
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
Capacitor
Hardware Controlled Store/Busy
1 Rev 1.1



Simtek
Simtek

U632H16 Datasheet Preview

U632H16 Datasheet

PowerStore 2K x 8 nvSRAM

No Preview Available !

U632H16 pdf
U632H16
Block Diagram
A5
A6
A7
A8
A9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Truth Table for SRAM Operations
EEPROM Array
32 x (64 x 8)
STORE
SRAM
Array
RECALL
32 Rows x
64 x 8 Columns
Column I/O
Column Decoder
A0 A1 A2 A3 A4 A10
Power
Control
VCCX
VSS
VCAP
VCCX
VCAP
Store/
Recall
Control
HSB
Software
Detect
A0 - A10
G
E
W
Operating Mode
E HSB W
G
DQ0 - DQ7
Standby/not selected
Internal Read
HH
*
*
L HHH
High-Z
High-Z
Read
L HH L
Data Outputs Low-Z
* H or L
Write
LHL
*
Data Inputs High-Z
Characteristics
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input levels of VIL = 0 V
and VIH = 3 V. The timing reference level of all input and outputsignals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases
transition is measured ± 200 mV from steady-state voltage.
Absolute Maximum Ratingsa
Symbol
Min.
Max.
Unit
Power Supply Voltage
VCC -0.5
7V
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
C-Type
K-Type
VI
VO
PD
Ta
-0.3
VCC+0.5
V
-0.3
VCC+0.5
V
1W
0 70 °C
-40 85 °C
Storage Temperature
Tstg -65
150 °C
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
STK Control #ML0046
2
Rev 1.1
August 15, 2006


Part Number U632H16
Description PowerStore 2K x 8 nvSRAM
Maker Simtek
Total Page 15 Pages
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