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Sirectifier Semiconductors
Sirectifier Semiconductors

STT320 Datasheet Preview

STT320 Datasheet

Thyristor-Thyristor Modules

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STT320 pdf
STT320
Thyristor-Thyristor Modules
Type
STT320GK08
STT320GK12
STT320GK14
STT320GK16
STT320GK18
VRSM
VDSM
V
900
1300
1500
1700
1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
repetitive, IT=960A
non repetitive, IT=320A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
www.DMatdaSheetMT4eUorum.cnointminagl ctoonrqnueect(ioMn5t)orque (M8)
Weight Typical including screws
Maximum Ratings
500
320
9200
9800
8000
8600
420000
400000
320000
306000
100
500
1000
120
60
20
10
-40...+140
140
-40...+125
3000
3600
2.5-5/22-44
12-15/106-132
320
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g



Sirectifier Semiconductors
Sirectifier Semiconductors

STT320 Datasheet Preview

STT320 Datasheet

Thyristor-Thyristor Modules

No Preview Available !

STT320 pdf
STT320
Thyristor-Thyristor Modules
Symbol
Test Conditions
IRRM
IDRM
VT, VF
VTO
rT
VGT
IGT
VGD
IGD
IL
IH
tgd
tq
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=600A; TVJ=25oC
For power-loss calculations only (TVJ=140oC)
VD=6V;
VD=6V;
TVJ=TVJM;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VD=2/3VDRM
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
70
40
1.32
0.8
0.82
2
3
150
200
0.25
10
Unit
mA
mA
V
V
m
V
mA
V
mA
200 mA
150 mA
2 us
typ. 200 us
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
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APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits


Part Number STT320
Description Thyristor-Thyristor Modules
Maker Sirectifier Semiconductors
Total Page 4 Pages
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STT320 pdf
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