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Sirenza Microdevices
Sirenza Microdevices

NGA-489 Datasheet Preview

NGA-489 Datasheet

InGaP/GaAs HBT MMIC Amplifier

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NGA-489 pdf
Product Description
Sirenza Microdevices’ NGA-489 is a high performance InGaP/
GaAs HBT MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance
up to 10 GHz with excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. At 850 Mhz and 65mA , the NGA-
489 typically provides +38.0 dBm output IP3, 15 dB of gain,
and +17.2 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
(From de-imbedded S-parameters)
20 0
GAIN
15
-10
IRL
10
-20
5
ORL
-30
0 -40
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
NGA-489
0.5-10 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• High Gain : 14.5 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
G Small Signal Gain
P1dB
Output Power at 1dB Compression
OIP3 Output Third Order Intercept Point
Bandwidth Determined by Return Loss (>10dB)
IRL Input Return Loss
Units
dB
dBm
dBm
MHz
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
Min.
13.5
Typ.
15.0
14.5
14.2
17.2
17.0
38.0
37.0
10000
19.7
Max.
16.0
ORL Output Return Loss
dB 1950 MHz
27.0
NF Noise Figure
dB 1950 MHz
4.0
VD Device Operating Voltage
V
3.6 4.0
4.4
ID Device Operating Current
mA
59 65 71
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 62 Ohms
ID = 65 mA Typ.
TL = 25ºC
°C/W
145
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100375 Rev OBS



Sirenza Microdevices
Sirenza Microdevices

NGA-489 Datasheet Preview

NGA-489 Datasheet

InGaP/GaAs HBT MMIC Amplifier

No Preview Available !

NGA-489 pdf
OBSOLETE Preliminary
NGA-489 0.5-10 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
G Small Signal Gain
Unit 500
dB 14.6
Frequency (MHz)
850
1950
2400
15.0
14.5
14.4
3500
14.2
OIP3
P1dB
IRL
Output Third Order Intercept Point dBm
Output Power at 1dB Compression dBm
Input Return Loss
dB
37.6
17.2
26.0
38.0
17.2
24.0
37.0
17.0
19.7
34.9
16.7
18.0
31.7
15.8
17.0
ORL Output Return Loss
dB 33.0
32.0
27.0
26.0
27.0
S12 Reverse Isolation
NF Noise Figure
Test Conditions:
VS = 8 V
RBIAS = 62 Ohms
dB 18.3
18.3
18.6
18.7
19.0
dB 4.3 4.3 4.0 4.2 4.4
ID = 65 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Noise Figure vs. Frequency
VD= 4.0 V, ID= 65 mA
7
6
TL=+25ºC
5
4
3
2
0123456
Frequency (GHz)
OIP3 vs. Frequency
VD= 4.0 V, ID= 65 mA
45
+25°C
40 TL -40°C
+85°C
35
30
25
20
0123456
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
100 mA
6V
+15 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
P1dB vs. Frequency
VD= 4.0 V, ID= 65 mA
20
+25°C
18 TL -40°C
+85°C
16
14
12
10
0123456
Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100375 Rev OBS


Part Number NGA-489
Description InGaP/GaAs HBT MMIC Amplifier
Maker Sirenza Microdevices
Total Page 5 Pages
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