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Sirenza Microdevices
Sirenza Microdevices

SBF-4089Z Datasheet Preview

SBF-4089Z Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

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SBF-4089Z pdf
Product Description
Sirenza Microdevices’ SBF-4089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 0.5 GHz
with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
16
15.5
15
14.5
14
13.5
13
12.5
12
11.5
11
0
S -P aram eters vs Freq uency +25c
0
s21
s11
s22 -5
-10
-15
-20
-25
100 200 300 400 500 600 700 800 900
Fre q
SBF-4089
SBF-4089Z
Pb RoHS Compliant
& Green Package
DC-500 MHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
Available in Lead Free, RoHS compliant,
& Green packaging
• IP3 = 42dBm @ 240MHz
• Stable Gain Over Temperature
Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Low Thermal Resistance
Applications
• Receiver IF Amplifier
• Cellular, PCS, GSM, UMTS
• PA Driver Amp
• Wireless Data, Satellite Terminals
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
P1dB
Output Power at 1dB Compression
OIP3
IRL
Output Third Order Intercept Point
Input Return Loss
dB
dBm
dBm
dB
70MHz
240 MHz
500 MHz
70MHz
240 MHz
400 MHz
70MHz
240 MHz
400 MHz
500 MHz
13.3
13.2
18.4
39.0
13.0
14.9
14.8
14.7
20.1
20.1
19.9
40.0
42.0
41.0
17.0
16.3
16.2
ORL Output Return Loss
dB
500 MHz
12.0 16.0
NF Noise Figure
dB 500 MHz
3.3 4.3
VD Device Operating Voltage
V
4.5 4.9
5.3
ID Device Operating Current
mA
82 90 98
RTH, j-l Thermal Resistance (junction to lead)
°C/W
43
Test Conditions:
VS = 8 V
RBIAS = 33 Ohms
ID = 90 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms, App circuit page 4.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103412 Rev. C



Sirenza Microdevices
Sirenza Microdevices

SBF-4089Z Datasheet Preview

SBF-4089Z Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

No Preview Available !

SBF-4089Z pdf
Preliminary
SBF-4089 DC-500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 70
G Small Signal Gain
dB 14.9
OIP3 Output Third Order Intercept Point dBm
P1dB Output Power at 1dB Compression dBm
IRL Input Return Loss
dB
40.0
20.1
18
ORL Output Return Loss
dB 15
S12 Reverse Isolation
NF Noise Figure
TeTsetstCCoonnddititioionnss:
RVVRSBSIB=AI=SAS8=8=3VV339OOhhmmss
dB 18
dB 3.2
TIDTILD=L===92802505mººCmCAATTyypp..
FreFqrueqenuceync(My H(MzH) z)
100 240 400 500
850
14.9 14.9 14.8 14.7 14.3
40.5 42.5 41.0 40.0 35.1
20.1 20.1 19.9 20.1 18.1
22 22 21 21 19
16 17 19 21 18
18 18 18 18 18
3.3 3.3 3.3 3.3 3.3
ZOZOSISP=IP=3Z3TZLToL=on=ne55e0S0SpOOpahahcmcmininsgs,g==11MMAHpHzpz, ,cPirPocouuutittppePerartgoteonne4e==00ddBBmm
20.5
20
19.5
19
18.5
18
17.5
17
50
P1dB vs Temp
+25c
-40c
+85c
250 450 650
Frequency(MHz)
850
45
43
41
39
37
35
33
31
29
27
25
50
TOIP vs Temp
+25c
-40c
+85c
250 450 650
Frequency(MHz)
850
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
150 mA
6V
+19 dBm
Max Operating Dissipated
Power
0.8 W
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=TLEAD
Noise Figure vs Temp
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
50
+25c
-40c
+85c
250 450 650
Frequency(MHz)
850
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103412 Rev. C


Part Number SBF-4089Z
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Maker Sirenza Microdevices
Total Page 5 Pages
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