http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Sirenza Microdevices
Sirenza Microdevices

SDM-08060 Datasheet Preview

SDM-08060 Datasheet

Class AB 60W Power Amplifier Module

No Preview Available !

SDM-08060 pdf
Product Description
The SDM-08060 60W power module is
an impedance matched, single stage,
push-pull Class AB amplifier module
suitable for use as a power amplifier
driver or output stage. It is a drop in,
no tune, solution for high power appli-
cations requiring high efficiency, excel-
lent linearity, and unit to unit
repeatability.
Functional Block Diagram
Advance
SDM-08060
869-894 MHz Class AB
60W Power Amplifier Module
Product Features
50 W RF impedance
60W Output P1dB
28 Volt Operation
High Gain: 17 dB Typical
High Efficiency
Application
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Key Specifications
Parameter
Frequency
P1dB
Gain
Gain Flatness
Efficiency
IRL
IMD
Delay
Phase Linearity
Description: Test Conditions
Zin = Zout = 50Ω, VDD = 28.0V, ID1 =300mA, ID2 =300mA,
TFlange = 25ºC
Frequency of Operation
Output Power at 1dB Compression, 881 MHz
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
Peak to Peak Gain Variation, 869 - 894MHz
Drain Efficiency at 60W PEP, 880MHz and 881MHz
Input Return Loss 12W CW Output Power, 869 - 894MHz
3rd Order IMD Product, 60W PEP, 880MHz and 881MHz
Signal Delay from Pin 3 to Pin 8
Deviation from Linear Phase (Peak to Peak)
Unit
MHz
W
dB
dB
%
dB
dBc
nS
Deg
Min.
869
60
16
-
32
-
-
-
-
Typ.
-
65
17
0.3
34
-15
-31
4.0
0.5
Max.
894
-
-
.5
-
-12
-28
-
-
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-XXXXXX Rev A



Sirenza Microdevices
Sirenza Microdevices

SDM-08060 Datasheet Preview

SDM-08060 Datasheet

Class AB 60W Power Amplifier Module

No Preview Available !

SDM-08060 pdf
Advance
SDM-08060 869-894 MHz 60W Amp
Pin Out Description
Pin #
Function
Description
1,5
2,4,7,9
VGS
Ground
This is the gate bias for the one side of the amplifier module.
Module Topside ground.
3
RF Input
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.
Care must be taken to protect against video transients that may damage the active devices.
6,10
8
VDD
RF Output
This is the drain feed for the amplifier module. See Note 1.
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads.
Care must be taken to protect against video transients that may damage the active devices.
Flange
Exposed area on the bottom side of the package provides electrical ground and a thermal transfer path for the
Gnd device. Proper mounting insures optimal performance and the highest reliablility. See Sirenza applications
note:AN-054 Detailed Installation Instructions for Power Modules.
Simplified Device Schematic
1
10
2
Q1
3
Q2
4
9
8
7
6
5
Case Flange = Ground
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (VDD)
RF Input Power
35 V
+37 dBm
Load Impedance for Continuous Operation
Without Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
15 V
Output Device Channel Temperature
+200
ºC
Lead Temperature During Solder Reflow
+210
ºC
Operating Temperature Range
-20 to +90
ºC
Storage Temperature Range
-40 to +100 ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation see
typical setup values on the key specification table on the first
page of the datasheet.
Note 1:
Internal RF decoupling is included on all bias
leads. No additional bypass elements are
required, however some applications may
require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 2:
Gate voltage must be applied coincident with or
after application of the drain voltage to prevent
potentially destructive oscillations. Bias volt-
ages should never be applied to a module
unless it is terminated on both input and output.
Note 3:
The VGS corresponding to a specific IDQ will
vary from module to module and may vary
between the two sides of a dual RF module by
as much as ±0.10 volts. This is due to the nor-
mal die-to-die variation in threshold voltage of
Note 4:
Since the gate bias of an LDMOS transistor
changes with device temperature, it may be nec-
essary to use a VGS supply with thermal com-
pensation if operation over a wide temperature
range is required.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-XXXXXX Rev A


Part Number SDM-08060
Description Class AB 60W Power Amplifier Module
Maker Sirenza Microdevices
Total Page 3 Pages
PDF Download
SDM-08060 pdf
Download PDF File
SDM-08060 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 SDM-08060 Class AB 60W Power Amplifier Module Sirenza Microdevices
Sirenza Microdevices
SDM-08060 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components