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Sirenza Microdevices
Sirenza Microdevices

SGA-3263Z Datasheet Preview

SGA-3263Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

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SGA-3263Z pdf
SGA-3263
Product Description
The SGA-3263 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
SGA-3263Z Pb RoHS Compliant
& Green Package
DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
20 VD= 2.6 V, ID= 35 mA (Typ.)
GAIN
15
10 IRL
5
ORL
0
0 12 3 4 5
Frequency (GHz)
0
-10
-20
-30
-40
6
TL=+25ºC
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• Broadband Operation: DC-5500 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
13.5 15.0 16.5
dB 1950 MHz
13.6
2400 MHz
13.3
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
11.6
10.9
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
26.2
24.1
Bandwidth Determined by Return Loss (>10dB)
MHz
5500
IRL Input Return Loss
dB 1950 MHz
20.3
ORL Output Return Loss
dB 1950 MHz
21.5
NF Noise Figure
dB 1950 MHz
3.8
VD Device Operating Voltage
V
2.3 2.6 2.9
ID Device Operating Current
mA
31 35 39
RTH, j-l Thermal Resistance (junction to lead) °C/W
255
Test Conditions:
VS = 5 V
RBIAS = 68 Ohms
ID = 35 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100632 Rev F



Sirenza Microdevices
Sirenza Microdevices

SGA-3263Z Datasheet Preview

SGA-3263Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

SGA-3263Z pdf
SGA-3263 DC-5500 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
G Small Signal Gain
Unit 100
dB 15.4
FrequFFernreecqqyuu(eeMnnHccyzy)((MMHHzz))
500 850 1950
15.2 15.0 13.6
2400
13.3
3500
12.5
OIP3 Output Third Order Intercept Point dBm
26.1 26.2
24.1 22.6
P1dB Output Power at 1dB Compression dBm
11.4 11.6 10.9 10.1
IRL Input Return Loss
dB 27.0 25.6 23.6 20.3 20.4 21.8
ORL Output Return Loss
dB 20.8 22.9 28.0 21.5 19.4 22.7
S Reverse Isolation
12
NF Noise Figure
Test Conditions: VVSS== 85 VV
RRBBIIAASS== 3698 OOhhmmss
dB 18.2
dB
IIDD == 8305 mmAA TTyypp..
TTLL==2255ººCC
18.4 18.6 19.1 19.1 18.9
3.7 3.6 3.8 4.3
OOIIPP33TToonnee SSppaacciinngg == 11 MMHHzz,, PPoouutt ppeerr ttoonnee == 0-5ddBBmm
ZZSS== ZZLL== 5500 OOhhmmss
Noise Figure vs. Frequency
VD= 2.6 V, ID= 35 mA (Typ.)
5
4
3
2
1
0 TL=+25ºC
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
70 mA
4V
+18 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD= 2.6 V, ID= 35 mA (Typ.)
35
30
25
20
TL=+25ºC
15
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
15
13
11
9
7
5
0
P1dB vs. Frequency
VD= 2.6 V, ID= 35 mA (Typ.)
TL=+25ºC
0.5 1 1.5 2 2.5 3
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100632 Rev F


Part Number SGA-3263Z
Description Cascadable SiGe HBT MMIC Amplifier
Maker Sirenza Microdevices
Total Page 5 Pages
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