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Sirenza Microdevices
Sirenza Microdevices

SGA-4163Z Datasheet Preview

SGA-4163Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

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SGA-4163Z pdf
SGA-4163
Product Description
SGA-4163Z Pb RoHS Compliant
& Green Package
The SGA-4163 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high DC-5000 MHz, Cascadable
FT and excellent thermal perfomance. The heterojunction in- SiGe HBT MMIC Amplifier
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS Product Features
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony • Now available in Lead Free, RoHS
trioxide nor halogenated fire retardants.
Compliant, & Green Packaging
• Broadband Operation: DC-5000 MHz
Gain & Return Loss vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
16 0
• Cascadable 50 Ohm
• Operates From Single Supply
12
GAIN
• Low Thermal Resistance Package
-10
8
ORL
-20
4 IRL
TL=+25ºC
-30
0 -40
0123456
Frequency (GHz)
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
9.5 10.5 11.5
dB 1950 MHz
9.7
2400 MHz
9.6
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
13.0
12.1
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
29.7
25.4
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
IRL Input Return Loss
dB 1950 MHz
28.0
ORL Output Return Loss
dB 1950 MHz
20.1
NF Noise Figure
dB 1950 MHz
5.0
VD Device Operating Voltage
V
2.9 3.2 3.5
ID Device Operating Current
mA
41 45 49
RTH, j-l Thermal Resistance (junction to lead)
°C/W
255
Test Conditions:
VS = 8 V
RBIAS = 110 Ohms
ID = 45 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100638 Rev. G



Sirenza Microdevices
Sirenza Microdevices

SGA-4163Z Datasheet Preview

SGA-4163Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

SGA-4163Z pdf
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 100
FrequFFernreecqqyuu(eeMnnHccyzy)((MMHHzz))
500 850 1950
2400
3500
G Small Signal Gain
dB 10.3 10.2 10.5
9.7
9.6
9.4
OIP3 Output Third Order Intercept Point dBm
30.2 29.7 25.4 23.0
P1dB Output Power at 1dB Compression dBm
12.9 13.0 12.1 11.1
IRL Input Return Loss
dB 29.1 26.7 23.7 28.0 36.7 16.6
ORL Output Return Loss
dB 19.7 20.8 24.3 20.1 18.7 17.6
S12 Reverse Isolation
NF Noise Figure
Test Conditions: VVSS== 88 VV
RRBBIIAASS== 31910OOhmhms s
dB 15.5
dB
IIDD == 8405 mmAA TTyypp..
TTLL==2255ººCC
16.0 16.3 17.2 17.6 18.4
4.6 4.8 5.0 5.3
OOIIPP33TToonnee SSppaacciinngg == 11 MMHHzz,, PPoouutt ppeerr ttoonnee == 0-5ddBBmm
ZZSS== ZZLL== 5500 OOhhmmss
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
7
6
5
4
3
TL=+25ºC
2
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
90 mA
5V
+18 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD=3.2 V, ID= 45 mA (Typ.)
35
P1dB vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
18
30 15
25 12
20
TL=+25ºC
15
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
9
TL=+25ºC
6
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100638 Rev. G


Part Number SGA-4163Z
Description Cascadable SiGe HBT MMIC Amplifier
Maker Sirenza Microdevices
Total Page 5 Pages
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