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Sirenza Microdevices
Sirenza Microdevices

SGA-5586Z Datasheet Preview

SGA-5586Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

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SGA-5586Z pdf
SGA-5586
Product Description
The SGA-5586 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
SGA-5586Z Pb RoHS Compliant
& Green Package
DC-4000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
V = 3.9 V, I = 60 mA (Typ.)
DD
32
GAIN
24
IRL
16
ORL
0
-10
-20
8 TL=+25ºC-30
0 -40
012345
Frequency (GHz)
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 18.7 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
dB 850 MHz
dB 1950 MHz
dB 2400 MHz
23.1
18.7
17.3
P
1dB
Output Power at 1dB Compression
dBm
dBm
850 MHz
1950 MHz
18.1
15.8
OIP3 Output Third Order Intercept Point
dBm
dBm
850 MHz
1950 MHz
31.6
28.8
Bandwidth Determined by Return Loss (>10dB)
MHz
4000
IRL Input Return Loss
dB 1950 MHz
12.2
ORL Output Return Loss
dB 1950 MHz
20.7
NF Noise Figure
dB 1950 MHz
2.6
VD Device Operating Voltage
V
3.5 3.9 4.2
ID Device Operating Current
mA
54 60 66
RTH, j-l Thermal Resistance (junction to lead)
°C/W
Test Conditions:
VS = 8 V
RBIAS = 68 Ohms
ID = 60 mA Typ.
TL = 25ºC
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101267 Rev. D



Sirenza Microdevices
Sirenza Microdevices

SGA-5586Z Datasheet Preview

SGA-5586Z Datasheet

Cascadable SiGe HBT MMIC Amplifier

No Preview Available !

SGA-5586Z pdf
SGA-5586 DC-4000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 100
FrequFFernreecqqyuu(eeMnnHccyzy)((MMHHzz))
500 850 1950
2400
3500
G Small Signal Gain
dB 26.0 24.7 23.1 18.7 17.3 14.8
OIP3 Output Third Order Intercept Point dBm
31.5 31.6 28.8 27.1
P Output Power at 1dB Compression dBm
1dB
18.3 18.1 15.8 14.4
IRL Input Return Loss
dB 22.3 13.9 11.8 12.2 12.3 10.6
ORL Output Return Loss
dB 19.8 18.6 18.8 20.7 17.5 14.2
S Reverse Isolation
12
NF Noise Figure
Test Conditions: VVSS== 88 VV
RRBBIIAASS== 3795 OOhhmmss
dB 27.7
dB
IIDD == 8600 mmAA TTyypp..
TTLL == 2255ººCC
27.4 27.0 23.4 21.5 17.5
2.5 2.5 2.6 3.0
OOIIPP33TToonnee SSppaacciinngg == 11 MMHHzz,, PPoouutt ppeerr ttoonnee == 00 ddBBmm
ZZSS== ZZLL== 5500 OOhhmmss
Noise Figure vs. Frequency
VD= 3.9 V, ID= 60 mA
5
4
3
2
1
0 TL=+25ºC
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
120 mA
6V
+16 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD= 3.9 V, ID= 60 mA
35
30
25
20
TL=+25ºC
15
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
20
18
16
14
12
10
0
P1dB vs. Frequency
VD= 3.9 V, ID= 60 mA
TL=+25ºC
0.5 1 1.5 2 2.5 3
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101267 Rev. D


Part Number SGA-5586Z
Description Cascadable SiGe HBT MMIC Amplifier
Maker Sirenza Microdevices
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