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Sirenza Microdevices
Sirenza Microdevices

SGB-2233Z Datasheet Preview

SGB-2233Z Datasheet

DC - 4.5 GHz Active Bias Gain Block

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SGB-2233Z pdf
Product Description
Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT
MMIC amplifier utilizing a Darlington configuration with an active bias
network. The active bias network provides stable current over tempera-
ture and process Beta variations. Designed to run directly from a 3V to
5V supply the SGB-2233 does not require a drop resistor as compared
to typical Darlington amplifiers. This robust amplifier features a Class
1C ESD rating, low thermal resistance , and unconditional stability. The
SGB-2233 product is designed for high linearity 3V gain block applica-
tions that require small size and minimal external components. It is on
chip matched to 50 ohm and an external bias inductor choke is required
for the application band.
This product is available in a RoHS Compliant and Green package with
matte tin finish, designated by the “Z” package suffix.
Functional Block Diagram
NC
NC
RFIN
NC
Active
Bias
NC
NC
RFOUT
NC
SGB-2233
Preliminary Data Sheet
SGB-2233Z
Pb RoHS Compliant
& Green Package
DC – 4.5 GHz Active Bias Gain Block
Product Features
Available in Lead Free, RoHS compliant, & Green
Packaging
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 6.7 dBm @ 1950MHz
IP3 = 19.0 dBm @ 1950MHz
Low Thermal Resistance = 221 C/W
Applications
3V Battery operated applications
LO buffer amp
RF pre-driver and RF receive path
Key Specifications
Symbol
Parameters: Test Conditions
Z0 = 50Ω, VCC = 3.0V, Ic = 25mA, T = 30ºC)
fO Frequency of Operation
Small Signal Gain – 850MHz
S21 Small Signal Gain – 1950MHz
Small Signal Gain – 2400MHz
Output Power at 1dB Compression – 850MHz
P1dB
Output Power at 1dB Compression – 1950MHz
Output Power at 1dB Compression – 2400MHz
Output IP3 – 850MHz
OIP3
Output IP3 – 1950MHz
Output IP3 – 2400MHz
IRL Input Return Loss @ 1950MHz
ORL
Output Return Loss@ 1950MHz
Ic Current
NF Noise Figure @1950MHz
Rth, j-l
Thermal Resistance (junction - lead)
Unit
MHz
dB
dBm
dB
dB
dB
mA
dB
ºC/W
Min.
DC
11.4
5.2
16.5
13.5
12.7
21
Typ.
13.9
12.9
12.5
7.9
6.7
6.4
20.5
19.0
19.0
19.5
16.7
25
4.2
221
Max.
4500
14.4
29
5.2
PreliminaryThe information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103079 Rev G



Sirenza Microdevices
Sirenza Microdevices

SGB-2233Z Datasheet Preview

SGB-2233Z Datasheet

DC - 4.5 GHz Active Bias Gain Block

No Preview Available !

SGB-2233Z pdf
Preliminary Data Sheet
SGB-2233 DC-4.5GHz Active Bias Gain Block
Detailed Performance Table: Vcc=3V, Ic=25mA, T=25C, Z=50ohms
Symbol
Parameter
Units 100MHz 500MHz 850MHz
G
Small Signal Gain
dB 14.2
14.1
13.9
OIP3 Output 3rd Order Intercept Point dBm
21.5
20.5
P1dB Output Power at 1dB Compression dBm
8.2 7.9
IRL
Input Return Loss
dB 32.3
25.8
23.4
ORL
Output Return Loss
dB 34.5
25.8
22.0
S12
Reverse Isolation
dB 17.7
18.0
18.2
NF
Noise Figure
dB 4.3 3.9 3.9
1950MHz
12.9
19.0
6.7
19.5
16.7
18.9
4.2
2400MHz
12.5
19.0
6.4
18.9
16.3
19.2
4.6
3500MHz
11.2
14.3
15.4
20.2
5.0
Pin Out Description
Pin #
Function
Description
1,2,4, 6,
7,8,11,
12,14
NC These are no connect pins. Leave them unconnected on the PC board.
3
RFIN
RF input pin. A DC voltage should not be connected externally to this pin
5
GND
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
10
RFOUT
RF Output pin. Bias is applied to the Darlington stage thru this pin.
13
VBIAS
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
16
VCC
This is Vcc for the active bias circuit.
Back-
side
GND
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It
is also the main thermal path.
Simplified Device Schematic
16 15 14 13
Active
1 Bias
2
3
4
12
11
10
9
56
78
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Absolute Maximum Ratings
Parameters
Value
Unit
Current (Ic total)
60 mA
Device Voltage (VD)
Power Dissipation
5V
0.2 W
Operating Lead Temperature (TL)
RF Input Power
-40 to +85
20
ºC
dBm
Storage Temperature Range
-40 to +150 ºC
Operating Junction Temperature (TJ)
+150
ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH’ j-l
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103079 Rev G


Part Number SGB-2233Z
Description DC - 4.5 GHz Active Bias Gain Block
Maker Sirenza Microdevices
Total Page 6 Pages
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