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Sirenza Microdevices
Sirenza Microdevices

XD010-04S-D4FY Datasheet Preview

XD010-04S-D4FY Datasheet

Class AB 10W Power Amplifier Module

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XD010-04S-D4FY pdf
Product Description
Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust
broadband 2-stage Class A/AB amplifier, suitable for use as a power ampli-
fier driver or output stage. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process. It is a drop-in, no-
tune, solution for high power applications requiring high efficiency, excel-
lent linearity, and unit-to-unit repeatability. Internal bias current compensa-
tion ensures stable performance over a wide temperature range. It is
internally matched to 50 ohms.
XD010-04S-D4F
XD010-04S-D4FY Pb RoHS Compliant
& Green Package
350-600 MHz Class AB
12W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
12
Temperature
Compensation
3
4
Product Features
Available in RoHS compliant packaging
50 W RF impedance
12W Output P1dB
Single Supply Operation : Nominally 28V
High Gain: 32 dB at 450 MHz
High Efficiency: 30% at 450 MHz
Robust 8000V ESD (HBM), Class 3B
XeMOS II LDMOS FETS
Temperature Compensation
RF in
V VD1 D2
Case Flange = Ground
RF out
Key Specifications
Applications
DTV
Public Service
Wireless Infrastructure
Military Communications
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
P1dB
Gain
Output Power at 1dB Compression, 450MHz
Gain at 10W Output Power, 450MHz
W
dB
Gain Flatness
Peak to Peak Gain Variation, 350 - 600MHz
dB
IRL
Input Return Loss 1W Output Power, 350 - 600MHz
dB
Efficiency
Linearity
Drain Efficiency at 10W CW, 350-600MHz
3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz
%
dBc
Delay
Signal Delay from Pin 1 to Pin 4
nS
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
Frequency
Frequency of Operation
MHz
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction-to-Case)
Thermal Resistance Stage 2 (Junction-to-Case)
ºC/W
ºC/W
Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =150 mA, TFlange = 25ºC
Min.
350
-
30
-
10
26
-
-
-
350
Typ.
-
12
32
1.0
15
30
-32
2.5
0.5
-
11
4
Max.
600
-
-
2.0
-
-
-28
-
-
600
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-104259 Rev D



Sirenza Microdevices
Sirenza Microdevices

XD010-04S-D4FY Datasheet Preview

XD010-04S-D4FY Datasheet

Class AB 10W Power Amplifier Module

No Preview Available !

XD010-04S-D4FY pdf
XD010-04S-D4F 350-600 MHz 12W Power Amp Module
Quality Specifications
Parameter
ESD Rating
Human Body Model, JEDEC Document - JESD22-A114-B
MTTF
85oC Leadframe, 200oC Channel
Unit
V
Hours
Typical
8000
1.2 X 106
Pin Description
Pin #
Function
1 RF Input
2 VD1
3 VD2
4 RF Output
Flange
Gnd
Description
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
This is the drain voltage for the first stage. Nominally +28Vdc
This is the drain voltage for the 2nd stage of the amplifier module. The 2nd stage gate bias is temperature compensated to
maintain constant quiscent drain current over the operating temperature range. See Note 1.
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for
optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza’s web site.
Simplified Device Schematic
2 VD1
3 VD2
RFin
1
Bias
Network
Q1
Temperature
Compensation
Q2
RFout
4
Case Flange = Ground
Absolute Maximum Ratings
Parameters
1st Stage Bias Voltage (VD1 )
2nd Stage Bias Voltage (VD2)
RF Input Power
Value
35
35
+20
Unit
V
V
dBm
Load Impedance for Continuous Operation With-
out Damage
5:1
VSWR
Output Device Channel Temperature
+200
ºC
Operating Temperature Range
-20 to +90
ºC
Storage Temperature Range
-40 to +100
ºC
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
Note 1:
The internally generated gate voltage is thermally compen-
sated to maintain constant quiescent current over the temper-
ature range listed in the data sheet. No compensation is
provided for gain changes with temperature. This can only be
accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to
an adjacent PCB. The maximum soldering iron tip tempera-
ture should not exceed 700° C, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN060 (www.sirenza.com) for fur-
ther installation instructions.
http://www.sirenza.com
EDS-104259 Rev D


Part Number XD010-04S-D4FY
Description Class AB 10W Power Amplifier Module
Maker Sirenza Microdevices
Total Page 5 Pages
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