| Description | Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtai... |
| Features |
Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the ... |
| Datasheet |
 DDB2265-220 Datasheet - 588.43KB |
