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Supertex  Inc
Supertex Inc

TN0104 Datasheet Preview

TN0104 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FETs

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TN0104 pdf
Supertex inc.
TN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
Package Option
TN0104N3-G
TO-92
TN0104N3-G P002
TN0104N3-G P003
TN0104N3-G P005 TO-92
TN0104N3-G P013
TN0104N3-G P014
TN0104N8-G
TO-243AA (SOT-89)
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Packing
1000/Bag
2000/Reel
2000/Reel
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
TO-92
θja
132OC/W
TO-243AA (SOT-89)
133OC/W
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
40V 1.8Ω
Pin Configuration
IDSS
(min)
2.0A
SOURCE
DRAIN
GATE
TO-92
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Product Marking
SiTN
0104
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
TN1LW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TN0104
C080813
Supertex inc.
www.supertex.com



Supertex  Inc
Supertex Inc

TN0104 Datasheet Preview

TN0104 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FETs

No Preview Available !

TN0104 pdf
Thermal Characteristics
Package
(continIDuous)
TO-92
450mA
ID
(pulsed)
2.40A
Power Dissipation
@TC = 25OC
1.0W
IDR
450mA
TO-243AA (SOT-89)
630mA
2.90A
1.6W
630mA
Notes:
ID (continuous) is limited by max rated Tj .
TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
TN0104
IDRM
2.40A
2.90A
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in VGS(th) with temperature
Gate body leakage
IDSS Zero gate voltage drain current
ID(ON) On-state drain current
RDS(ON)
Static drain-to-source
on-state resistance
Both packages
TO-92
TO-243AA
40 - - V VGS = 0V, ID = 1.0mA
0.6 - 1.6 V VGS = VDS, ID= 500µA
- -3.8 -5.0 mV/OC VGS = VDS, ID= 1.0mA
- 0.1 100 nA VGS = ± 20V, VDS = 0V
- - 1.0
VGS = 0V, VDS = Max Rating
-
-
100
µA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
- 0.35 -
VGS = 3.0V, VDS = 20V
0.5 1.1
-
A VGS = 5.0V, VDS = 20V
2.0 2.6
-
VGS = 10V, VDS = 20V
- 5.0
-
VGS = 3.0V, ID = 50mA
- 2.3 2.5
- 1.5 1.8
- - 2.0
Ω VGS = 5.0V, ID = 250mA
VGS = 10V, ID = 1.0A
ΔRDS(ON) Change in RDS(ON) with temperature
- 0.7 1.0 %/OC VGS = 10V, ID = 1.0A
GFS Forward transductance
340 450
- mmho VDS = 20V, ID = 500mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- - 70
VGS = 0V,
- - 50 pF VDS = 20V,
- - 15
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 3.0 5.0
-
-
7.0 8.0
6.0 9.0
VDD = 20V,
ns ID = 1.0A,
RGEN = 25Ω
- 5.0 8.0
VSD
Diode forward voltage
drop
TO-92
TO-243AA
- 1.2 1.8
- - 2.0
V VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 0.5A
trr Reverse recovery time
- 300 -
ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Doc.# DSFP-TN0104
C080813
Supertex inc.
2 www.supertex.com


Part Number TN0104
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Maker Supertex Inc
Total Page 7 Pages
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