Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Diodes
1SS193 SWITCHING DIODE
FEATURES
Power dissipation
PD : 150 mW(Tamb=25℃)
Forward Current
IF : 100 m A
Reverse Voltage
VR: 80 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
SOT-23
2. 4
1. 3
Unit : mm
Mar ki ng F3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=80V
MIN MAX
80
0.5
Forward voltage
VF IF=100mA
1.2
UNIT
V
µA
V
Diode capacitance
CD VR=0V f=1MHz
3 pF
Reverse recovery time
t rr
4 nS
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