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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

BC817-25 Datasheet

NPN Small Signal Transistor

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BC817-25 pdf
Small Signal Product
300mW, NPN Small Signal Transistor
BC817-16/-25/-40
Taiwan Semiconductor
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.008gram (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PD
VCBO
VCEO
VEBO
IC
RθJA
TJ
TSTG
300
50
45
5
500
417
150
-55 to + 150
UNIT
mW
V
V
V
mA
°C
°C
°C
PARAMETER
SYMBOL BC817-16
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Junction Capacitance
DC Current Gain
DC Current Gain
Min. DC Current Gain
VCE= 5V
IC= 10µA IE= 0
IC= 10mA IB= 0
IE= 1µA IC= 0
VCB= 45V IE= 0
VEB= 4V IC= 0
IC= 500mA IB= 50 mA
IC= 500mA IB= 50 mA
IC= 10mA f= 100MHz
VCB=10V f= 1.0MHz
VCE= 1V IC= 100mA
VCE= 1V IC= 100mA
Vce=1V Ic=500mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
CCBO
hFE
hFE
hFE
100
>40
100-250
BC817-25
50
45
5
0.1
0.1
0.7
1.2
100
10
400
160
160-400
40
BC817-40
600
250
250-600
UNIT
V
V
V
µA
µA
V
V
MHz
pF
Document Number: DS_S1404005
Version: G14


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

BC817-25 Datasheet

NPN Small Signal Transistor

No Preview Available !

BC817-25 pdf
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
Fig.1 Typical Pulsed Current Gain VS.
10
25oC
1
0.1
0.01
0.001
0
VCE = 5 V
100 200 300 400 500
hFE
1000
Fig. 3 Base-EFmigi.tt3er Saturation Voltage
VS. Collector Current
100
25oC
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE , Base-Emitter Voltage (V)
Fig. 5 CollectorF-iBga. s5e Capacitance VS.
Collector-Base Voltage
40
30
20
10
0
0
4 8 12 16 20 24
VCB , Collector-Base Voltage (V)
28
Document Number: DS_S1404005
BC817-16/-25/-40
Taiwan Semiconductor
10.00
Fig. 2 Collector-Emitter Saturation Voltage VS.
Collector Current
1.00
0.10
0.01
0.0
0.1 0.2 0.3 0.4 0.5
VCE(sat) , Collector Emitter Voltage (V)
0.6
1.000
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
0.100
0.010
25oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VBE(sat) , Base-Emitter on Voltage (V)
1.4
Version: G14


Part Number BC817-25
Description NPN Small Signal Transistor
Maker Taiwan Semiconductor
Total Page 5 Pages
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