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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSC966CW Datasheet

NPN Silicon Planar High Voltage Transistor

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TSC966CW pdf
TSC966
NPN Silicon Planar High Voltage Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
SOT-223
Pin Definition: PRODUCT SUMMARY
1. Base
2. Collector
3. Emitter
BVCBO
BVCEO
600V
400V
IC 300mA
VCE(SAT)
0.5V @ IC / IB = 50mA / 5mA
Features
High BVceo, BVcbo
High current gain
Structure
Epitaxial Planar Type
Ordering Information
Part No.
Package
Packing
TSC966CT B0
TO-92
1Kpcs / Bulk
TSC966CT A3
TO-92
2Kpcs / Ammo
TSC966CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
VCBO
VCES
VCEO
VEBO
IC
Total Power Dissipation @ TA=25oC
TO-92
SOT-223
Ptot
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TSTG
Limit
600
600
400
7
0.3
1
0.9
1
+150
- 55 to +150
Unit
V
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
IC = 50uA
IC = 100uA, VBE= 0
IC = 1mA
IE = 50uA
VCB = 600V
VCE = 400V
VEB = 7V
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
VCE = 5V, IC = 1mA
VCE = 5V, IC = 20mA
VCE = 10V, IE= 20mA
VCB = 20V, f=1MHz
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)
VBE(SAT)
hFE 1
hFE 2
fT
Cob
Min Typ Max Unit
600 -- -- V
600 -- -- V
400 -- -- V
7 -- -- V
-- -- 0.5 uA
-- -- 1 uA
-- -- 1.5 uA
-- -- 0.5 V
-- -- 1 V
100 --
--
90 -- 300
50 --
-- MHz
-- -- 7 pF
1/5 Version: D12


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSC966CW Datasheet

NPN Silicon Planar High Voltage Transistor

No Preview Available !

TSC966CW pdf
TSC966
NPN Silicon Planar High Voltage Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. IC
Figure 4. VBE(sat) vs Ic
Figure 5. VBE(on) vs Ic
Figure 6. Safety Operation Area
2/5 Version: D12


Part Number TSC966CW
Description NPN Silicon Planar High Voltage Transistor
Maker Taiwan Semiconductor
Total Page 5 Pages
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