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Toshiba Electronic Components Datasheet

1SS413CT Datasheet

Schottky Barrier Diode

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1SS413CT pdf
Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.50 V (typ.)
(2) Low reverse current : IR = 0.5 µA (max)
(3) Small total capacitance : Ct = 3.9 pF (typ.)
3. Packaging and Internal Circuit
1SS413CT
CST2
1: Cathode
2: Anode
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
25 V
Reverse voltage
VR 20
Peak forward current
IFM 100 mA
Average rectified current
IO 50 mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
Start of commercial production
1999-02
1 2014-03-11
Rev.1.0


Toshiba Electronic Components Datasheet

1SS413CT Datasheet

Schottky Barrier Diode

No Preview Available !

1SS413CT pdf
1SS413CT
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
VF(3)
IR
Ct
IF = 1 mA
IF = 5 mA
IF = 50 mA
VR = 20 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.33
V
0.38
V
0.50 0.55 V
  0.5 µA
3.9 pF
6. Marking
Fig. 6.1 Marking
7. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
8. Land Pattern Dimensions (for reference only)
(Unit: mm)
2
2014-03-11
Rev.1.0


Part Number 1SS413CT
Description Schottky Barrier Diode
Maker Toshiba
Total Page 5 Pages
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