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Toshiba Electronic Components Datasheet

1SS416 Datasheet

Silicon Epitaxial Planar Type Diode

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1SS416 pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416
1SS416
High Speed Switching Application
z Small package
z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Symbol
VRM
Rating
35
Unit
V
0.2
±0.05
0.07 M A
0.1±0.05
Reverse voltage
VR 30 V
Maximum (peak) forward current IFM 200 mA
0.48
+0.02
-0.03
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 100 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55125
°C
fSC
Operating temperature range
Topr
40100
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
IR(2)
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 100mA
VR = 10V
VR = 30V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.18
0.23
V
0.38 0.50
― ― 20
μA
― ― 50
15 pF
Equivalent Circuit (Top View)
Marking
W
1 2007-11-01


Toshiba Electronic Components Datasheet

1SS416 Datasheet

Silicon Epitaxial Planar Type Diode

No Preview Available !

1SS416 pdf
110000m
1100m
11m
IF - VF
Ta=100°C
75°C
50°C
25°C
0°C
25°C
10.01u
0.1001u
0
100
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF(V)
0.5
CT - VR
Ta=25°C
f=1MHz
1SS416
1010m0
Ta=100°C
110000u
1100u
11u
1000n
IR - VR
75°C
50°C
25°C
0°C
25°C
100n
10n
0 10 20
REVERSE VOLTAGE VR(V)
30
Mounted on a glass epoxy
circuit board of 20 x 20mm,
pad dimension 4 x 4mm.
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE VR(V)
2 2007-11-01


Part Number 1SS416
Description Silicon Epitaxial Planar Type Diode
Maker Toshiba
Total Page 3 Pages
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