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Toshiba Electronic Components Datasheet

1SS417 Datasheet

Silicon Epitaxial Planar Type Diode

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1SS417 pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
Small package
Low forward voltage: VF (3) = 0.56V (typ.)
Low reverse current: IR = 5μA (Max.)
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.2
±0.05
0.07 M A
0.1±0.05
Maximum (peak) reverse voltage
Reverse voltage
VRM
VR
45 V
40 V
0.48
+0.02
-0.03
Maximum (peak) forward current IFM 200 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
Junction temperature
P * 100 mW
fSC
Tj 125 °C
Storage temperature range
Operating temperature range
Tstg
55~125
°C JEDEC
Topr
40~100
°C JEITA
TOSHIBA
1-1L1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.6mg(typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 50mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.56 0.62
― ― 5 μA
15 pF
Equivalent Circuit (Top View)
Marking
X
1 2007-11-01


Toshiba Electronic Components Datasheet

1SS417 Datasheet

Silicon Epitaxial Planar Type Diode

No Preview Available !

1SS417 pdf
1SS417
IF - VF
100
10 Ta=100°C
25
1
-25
0.1
0
0.2 0.4 0.6
FORWORDV OLT AGEVF(V)
110000u
101u0
1u1
1000n
10n0
1n0
1000p
10p0
0.8 0
IR - VR
Ta=100°C
75
50
25
0
-25
10 20 30
REVERSEV OVLRT AG(VE) VR(V)
40
CT - VR
100
Ta=25°C
f=1MHz
10
Mounted on a glass epoxy
circuit board of 20 x 20mm,
pad dimension 4 x 4mm.
1
0.1
0
10 20 30
REVERSE VOLTAGE VR(V)
40
2 2007-11-01


Part Number 1SS417
Description Silicon Epitaxial Planar Type Diode
Maker Toshiba
Total Page 3 Pages
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