http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Toshiba Electronic Components Datasheet

1SS419 Datasheet

Silicon Epitaxial Planar Type Diode

No Preview Available !

1SS419 pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
1SS419
Unit: mm
Small package
Low forward voltage: VF (3) = 0.56 V (typ.)
Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V sESC
Reverse voltage
VR 40 V
Maximum (peak) forward current IFM 200 mA
Average forward current
Surge current (10 ms)
Power dissipation
IO
IFSM
P*
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C JEDEC
Operating temperature range
Topr
40~100
°C JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
VR = 40 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
0.28
0.36
0.56 0.62
V
― ― 5 μA
15 pF
Equivalent Circuit (Top View)
Marking
X
1 2007-11-01


Toshiba Electronic Components Datasheet

1SS419 Datasheet

Silicon Epitaxial Planar Type Diode

No Preview Available !

1SS419 pdf
1SS419
IF - VF
100
10 Ta = 100°C
25
1
-25
0.1
0
0.2 0.4 0.6
FORWORD VOLTAGE VF (V)
110000u
101u0
1u1
1000n
10n0
IR – VR
Ta=100°C
75
50
25
0
1n0 -25
1000p
10p0
0.8 0 10 20 30
REVERSE VOLTAGE VR (V)
40
100
10
1
0.1
0
CT - VR
Ta = 25°C
f = 1MHz
10 20 30
REVERSE VOLTAGE VR (V)
40
140
120
100
80
60
40
20
0
0
P - Ta
Mounted on a glass glass-
epoxy circuit board of
20 x 20 mm, pad dimensions
of 4 x 4 mm.
25 50 75 100 125
AMBIENT TEMPERATURE Ta (°C)
150
2 2007-11-01


Part Number 1SS419
Description Silicon Epitaxial Planar Type Diode
Maker Toshiba
Total Page 3 Pages
PDF Download
1SS419 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 1SS412 Silicon Epitaxial Planar Type Diode Toshiba
Toshiba
1SS412 pdf
2 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SEMTECH
SEMTECH
1SS413 pdf
3 1SS413 Schottky Barrier Diode Toshiba
Toshiba
1SS413 pdf
4 1SS413CT Schottky Barrier Diode Toshiba
Toshiba
1SS413CT pdf
5 1SS416 Silicon Epitaxial Planar Type Diode Toshiba
Toshiba
1SS416 pdf
6 1SS416CT Silicon Epitaxial Planar Type Diode Toshiba
Toshiba
1SS416CT pdf
7 1SS417 Silicon Epitaxial Planar Type Diode Toshiba
Toshiba
1SS417 pdf
8 1SS417CT Silicon Epitaxial Planar Type Diode Toshiba
Toshiba
1SS417CT pdf
9 1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Pan Jit International
Pan Jit International
1SS417FN2 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components