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Toshiba Electronic Components Datasheet

D1224 Datasheet

2SD1224

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D1224 pdf
2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
10
1.5
0.15
1.0
10
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
Equivalent Circuit
BASE
COLLECTOR
EMITTER
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2002-07-23


Toshiba Electronic Components Datasheet

D1224 Datasheet

2SD1224

No Preview Available !

D1224 pdf
2SD1224
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 150 mA
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
30 ― ―
V
4000
― ― 1.5 V
― ― 2.2 V
Turn-on time
Switching time Storage time
Fall time
ton
OUTPUT
0.18
20 µs
IB1
INPUT
tstg
IB2
IB2
0.6 µs
VCC 15 V
tf IB1 = IB2 = 1 mA,
DUTY CYCLE 1%
0.3
Marking
D1224
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23


Part Number D1224
Description 2SD1224
Maker Toshiba
Total Page 5 Pages
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