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Toshiba Electronic Components Datasheet

J537 Datasheet

2SJ537

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J537 pdf
2SJ537
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
2SJ537
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance
: RDS (ON) = 0.16 (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = 100 μA (VDS = 50 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
50
50
±20
5
15
0.9
150
55~150
V
V
V
A
A
W
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (cha)
138 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
http://store.iiic.cc/
2009-09-29


Toshiba Electronic Components Datasheet

J537 Datasheet

2SJ537

No Preview Available !

J537 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 50 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 1.3 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turnon time
Switching time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
VDD ≈ −40 V, VGS = 10 V,
Gatesource charge
Qgs ID = 5 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
IDR = 5 A, VGS = 0 V
Marking
2SJ537
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
50 —
V
0.8 — 2.0
— 0.27 0.34
— 0.16 0.19
1.5 3.5
— 470 —
— 60 —
— 210 —
V
S
pF
— 25 —
— 35 —
ns
— 20 —
— 120 —
— 18 —
— 13 — nC
—5—
Min Typ. Max Unit
— — 5 A
— — 15 A
— — 1.5 V
J537
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Lot No.
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Note 2
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
http://store.iiic.cc/
2009-09-29


Part Number J537
Description 2SJ537
Maker Toshiba
Total Page 6 Pages
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J537 pdf
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