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Toshiba Electronic Components Datasheet

J681 Datasheet

2SJ681

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J681 pdf
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UMOSIII)
2SJ681
2SJ681
Relay Drive, DCDC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drainsource ON resistance: RDS (ON) = 0.12 (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
z Enhancement mode: Vth = 0.8 to 2.0 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
5
20
20
40.5
5
2
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
6.5±0.2
5.2±0.2
Unit: mm
0.6 MAX.
0.9
2.3 2.3
1.1±0.2
0.6 MAX
123
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25
125
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-06-30
Datasheet pdf - http://www.DataSheet4U.net/


Toshiba Electronic Components Datasheet

J681 Datasheet

2SJ681

No Preview Available !

J681 pdf
www.DataSheet4U.com
www.DataSheet.co.kr
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turnon time
Switching time
Fall time
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS0 V
10 V
ID = 2.5 A
Output
RL =
12
VDD ∼− 30 V
Duty <= 1%, tw = 10 µs
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 5 A
Qgd
2SJ681
Min
60
35
0.8
2.5
Typ.
0.16
0.12
5.0
700
60
90
Max
±10
100
2.0
0.25
0.17
Unit
µA
µA
V
V
V
S
pF
— 14 —
— 24 —
ns
— 14 —
— 95 —
— 15 —
— 11 — nC
—4—
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / µS
Min Typ. Max Unit
— — 5 A
— — 20 A
— — 1.7 V
— 40 — ns
— 32 — nC
Marking
J681
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-06-30
Datasheet pdf - http://www.DataSheet4U.net/


Part Number J681
Description 2SJ681
Maker Toshiba
Total Page 6 Pages
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