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Toshiba Electronic Components Datasheet

K10A60D Datasheet

TK10A60D

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K10A60D pdf
TK10A60D
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK10A60D
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
10
40
45
363
10
4.5
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
1
3
2009-09-29


Toshiba Electronic Components Datasheet

K10A60D Datasheet

TK10A60D

No Preview Available !

K10A60D pdf
Electrical Characteristics (Ta = 25°C)
TK10A60D
www.DataSheet4U.com
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯ ⎯ ±1
IDSS
VDS = 600 V, VGS = 0 V
⎯ ⎯ 10
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 5 A
0.62 0.75
Yfs
VDS = 10 V, ID = 5 A
1.5 6.0
Ciss 1350
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
6
Coss
135
tr
10 V
VGS
ID = 5 A VOUT
22
0V
ton
50 Ω
RL =
40 Ω
55
tf 15
VDD ∼− 200 V
toff Duty 1%, tw = 10 μs
100
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
25
16 nC
9
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 40 A
⎯ ⎯ −1.7 V
1300
ns
12 ⎯ μC
Marking
K10A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29


Part Number K10A60D
Description TK10A60D
Maker Toshiba
Total Page 6 Pages
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