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Toshiba Electronic Components Datasheet

1SS306 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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1SS306 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306
High Voltage, High Speed Switching Applications
1SS306
Unit: mm
Small package
: SC-61
Low forward voltage
: VF (2) = 0.90 V (typ.)
Fast reverse recovery time : trr = 30 ns (typ.)
Small total capacitance : CT = 1.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
250
200
300 (*)
100 (*)
2 (*)
150
V
V
mA
mA
A
mW
Junction temperature
Storage temperature
Tj 125 °C JEDEC
Tstg 55 to 125 °C JEITA
SC-61
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
2-3J1A
temperature/current/voltage and the significant change in
Weight: 0.013 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test Condition
IF = 10 mA
IF = 100 mA
VR = 50 V
VR = 200 V
VR = 0 V, f = 1 MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.72 1.0
0.9 1.2
― ― 0.1
― ― 1.0
1.5 3.0
30 60
V
μA
pF
ns
Start of commercial production
1986-10
1 2015-06-08


Toshiba Electronic Components Datasheet

1SS306 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS306 pdf
Marking
Fig.1 Reverse Recovery Time (trr) Test Circuit
OUTPUT
1SS306
2 2015-06-08


Part Number 1SS306
Description SILICON EPITAXIAL PLANAR DIODE
Maker Toshiba Semiconductor
Total Page 4 Pages
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1SS306 pdf
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