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Toshiba Electronic Components Datasheet

1SS307 Datasheet

DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)

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1SS307 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
General Puropose Rectifier Applications
1SS307
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: VF = 1.0V (typ.)
: IR = 0.1nA (typ.)
: CT = 3.0pF (typ.)
: SC59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
35 V
30 V
300 mA
100 mA
1A
150 mW
Junction temperature
Tj
125 °C JEDEC
TO236MOD
Storage temperature
Tstg 55 to 125 °C JEITA
SC59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
13G1B
Weight: 12 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF
IR
CT
Test
Circuit
Test Condition
IF = 100mA
VR = 30V
VR = 0, f = 1MHz
Min Typ. Max Unit
1.0 1.3 V
10 nA
3.0 6.0 pF
Marking
Start of commercial production
1988-05
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS307 Datasheet

DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)

No Preview Available !

1SS307 pdf
1SS307
2 2014-03-01


Part Number 1SS307
Description DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)
Maker Toshiba Semiconductor
Total Page 3 Pages
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