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Toshiba Electronic Components Datasheet

1SS308 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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1SS308 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS308
1SS308
Ultra High Speed Switching Applications
Unit: mm
z Small package
: SC-74A
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
85
80
300 (*)
100 (*)
2 (*)
200
125
55 to 125
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEITA
TOSHIBA
SC74A
13H1A
temperature/current/voltage, etc.) are within the absolute maximum Weight: 0.014g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.61
0.74
V
0.92 1.20
― ― 0.1
μA
― ― 0.5
2.2 4.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1987-07
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS308 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS308 pdf
1SS308
Fig.1 Reverse Recovery Time (trr) Test Circuit
2 2014-03-01


Part Number 1SS308
Description SILICON EPITAXIAL PLANAR DIODE
Maker Toshiba Semiconductor
Total Page 3 Pages
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