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Toshiba Electronic Components Datasheet

1SS309 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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1SS309 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS309
1SS309
Ultra High Speed Switching Applications
Unit: mm
z Small package
: SC-74A
z Low forward voltage
: VF (3) = 0.90V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
85
80
300 (*)
100 (*)
2 (*)
200
V
V
mA
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg
55 to 125
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high JEITA
SC74A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
13H1B
reliability significantly even if the operating conditions (i.e. operating Weight: 0.014g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
0.1
μA
― ― 0.5
0.9 3.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1987-07
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS309 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS309 pdf
1SS309
Fig.1 Reverse Recovery Time (trr) Test Circuit
2 2014-03-01


Part Number 1SS309
Description SILICON EPITAXIAL PLANAR DIODE
Maker Toshiba Semiconductor
Total Page 3 Pages
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