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Toshiba Electronic Components Datasheet

1SS319 Datasheet

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

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1SS319 pdf
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS319
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC-61
1SS319
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
VRM
VR
IFM
45
40
300 (*)
V
V
mA
Average forward current
IO
100 (*)
mA
Power dissipation
P
150 (*)
mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55125 °C JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
EIAJ
TOSHIBA
SC61
23J1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.013g
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Marking
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.54 0.60
5 μA
18 25 pF
1 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/


Toshiba Electronic Components Datasheet

1SS319 Datasheet

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

No Preview Available !

1SS319 pdf
www.DataSheet.co.kr
1SS319
2 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 1SS319
Description DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
Maker Toshiba Semiconductor
Total Page 3 Pages
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