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Toshiba Electronic Components Datasheet

1SS357 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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1SS357 pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC-70
1SS357
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
VR
IFM
IO
IFSM
40 V
300 mA
100 mA
1A
Power dissipation
P
200*
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1E1A
reliability significantly even if the operating conditions (i.e. operating Weight: 0.004g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.54 0.60
― ― 5 μA
18 25 pF
Pin Assignment (Top View)
Marking
Start of commercial production
1990-01
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS357 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS357 pdf
1SS357
2 2014-03-01


Part Number 1SS357
Description SILICON EPITAXIAL PLANAR DIODE
Maker Toshiba Semiconductor
Total Page 3 Pages
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