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Toshiba Electronic Components Datasheet

1SS360F Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

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1SS360F pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360F
Ultra High Speed Switching Applications
1SS360F
Unit in mm
l Small package
: 1608 Flat lead
l Excellent in forward current and forward voltage
characteristics
: VF (3) = 0.92V (typ.)
l Fast reverse recovery time : trr = 1.6ns (typ.)
l Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
85
80
300 (*)
100 (*)
2 (*)
100
Junction temperature
Tj 125
Storage temperature range
Tstg 55~125
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
V
V
mA
mA
A
mW
°C
°C JEDEC
EIAJ
TOSHIBA
1-2SA1A
Weigh: 2.3 mg
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA
(Fig.1)
Min Typ. Max
0.61
0.74
0.92 1.20
― ― 0.1
― ― 0.5
2.2 4.0
1.6 4.0
Unit
V
mA
pF
ns
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-02-07 1/3


Toshiba Electronic Components Datasheet

1SS360F Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

No Preview Available !

1SS360F pdf
Fig.1 Reverse Recovery Time (trr) Test Circuit
1SS360F
Marking
2001-02-07 2/3


Part Number 1SS360F
Description DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
Maker Toshiba Semiconductor
Total Page 3 Pages
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