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Toshiba Electronic Components Datasheet

1SS368 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS368 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS368
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
1SS368
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
85
Reverse voltage
VR 80
Maximum (peak) forward current
IFM
200
Average forward current
IO 100
Surge current (10ms)
IFSM
1
Power dissipation
P 150 *
Junction temperature
Tj 125
Storage temperature range
Tstg 55125
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Unit
V
V
mA
mA
A
JEDEC
mW EIAJ
°C TOSHIBA
°C Weight: 1.9mg
1-1F1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.62
0.75
V
0.98 1.20
― ― 0.1 µA
― ― 0.5
0.5 3.0 pF
1.6 4.0 ns
961001EAA2
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
2000-09-14 1/3


Toshiba Electronic Components Datasheet

1SS368 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

No Preview Available !

1SS368 pdf
Fig.1 Reverse Recovery Time (trr) Test Circuit
1SS368
Pin Assingnment
(Top View)
Marking
961001EAA2’
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2000-09-14 2/3


Part Number 1SS368
Description DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
Maker Toshiba Semiconductor
Total Page 3 Pages
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