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Toshiba Electronic Components Datasheet

1SS383 Datasheet

Silicon epitaxial planar type diode

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1SS383 pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
Small package
Composed of 2 independent diodes.
Low forward voltage: VF (3) = 0.54V (typ.)
Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
45
40
300 *
100 *
1*
100 *
V
V
mA
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
Operating temperature range
Topr
40 to 100
°C
JEITA
TOSHIBA
1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
V
0.36
V
0.54 0.60
V
― ― 5 μA
18 25 pF
Pin Assignment (Top View)
Marking
Start of commercial production
1994-09
1 2015-01-15


Toshiba Electronic Components Datasheet

1SS383 Datasheet

Silicon epitaxial planar type diode

No Preview Available !

1SS383 pdf
1SS383
1.4
Ambient temperature Ta (°C)
2 2015-01-15


Part Number 1SS383
Description Silicon epitaxial planar type diode
Maker Toshiba Semiconductor
Total Page 3 Pages
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