http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Toshiba Electronic Components Datasheet

1SS385F Datasheet

DIODE (HIGH SPEED SWITCHING)

No Preview Available !

1SS385F pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
1SS385F
Unit in mm
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Ultra-small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
15
10
200 (*)
100 (*)
1 (*)
100
125
55125
40100
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Unit
V
V
mA
mA
A
mW
°C
°C
°C JEDEC
EIAJ
TOSHIBA
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 100mA
VR = 10V
VR = 0, f = 1MHz
Min. Typ. Max. Unit
0.18
V
0.23 0.30 V
0.35 0.50 V
― ― 20 µA
20 40 pF
Equivalent Circuit (Top View)
Marking
961001EAA2
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2000-09-14 1/2


Toshiba Electronic Components Datasheet

1SS385F Datasheet

DIODE (HIGH SPEED SWITCHING)

No Preview Available !

1SS385F pdf
1SS385F
2000-09-14 2/2


Part Number 1SS385F
Description DIODE (HIGH SPEED SWITCHING)
Maker Toshiba Semiconductor
Total Page 2 Pages
PDF Download
1SS385F pdf
Download PDF File
1SS385F pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 1SS385 Silicon epitaxial planar type diode Toshiba Semiconductor
Toshiba Semiconductor
1SS385 pdf
2 1SS385F DIODE (HIGH SPEED SWITCHING) Toshiba Semiconductor
Toshiba Semiconductor
1SS385F pdf
3 1SS385FV Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba
1SS385FV pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components