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Toshiba Electronic Components Datasheet

A1241 Datasheet

2SA1241

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A1241 pdf
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1241
Power Amplifier Applications
Power Switching Applications
2SA1241
Unit: mm
Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC3076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
50
5
2
1
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2006-11-09


Toshiba Electronic Components Datasheet

A1241 Datasheet

2SA1241

No Preview Available !

A1241 pdf
Electrical Characteristics (Ta = 25°C)
2SA1241
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 2 V, IB = 1.5 A
IC = 1 A, IB = 0.05 A
IC = 1 A, IB = 0.05 A
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1.0 μA
― ― −1.0 μA
50
V
70 240
40 ― ―
― ― −0.5 V
― ― −1.2 V
100 MHz
40 pF
Turn-on time
Switching time Storage time
ton OUTPUT 0.1
20 μs INPUT IB2
tstg IB2 IB1
1.0
μs
VCC = 30 V
Fall time
tf IB1 = IB2 = 0.05 A
DUTY CYCLE 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
0.1
A1241
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-09


Part Number A1241
Description 2SA1241
Maker Toshiba Semiconductor
Total Page 5 Pages
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A1241 pdf
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