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Toshiba Electronic Components Datasheet

A1430 Datasheet

2SA1430

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A1430 pdf
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1430
Unit: mm
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
20
20
10
6
2
4
2
1000
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-09


Toshiba Electronic Components Datasheet

A1430 Datasheet

2SA1430

No Preview Available !

A1430 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE (1)
(Note 3)
VCE = 1 V, IC = 0.5 A
hFE (2)
VCE = 1 V, IC = 4 A
VCE (sat) IC = 2 A, IB = 50 mA
VBE VCE = 1 V, IC = 2 A
fT VCE = 1 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE (1) classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Marking
A1430
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA1430
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
10
V
6 ― ―
V
140 600
60 120
― −0.20 0.50 V
― −0.83 1.5
V
140 MHz
50 pF
2
http://store.iiic.cc/
2006-11-09


Part Number A1430
Description 2SA1430
Maker Toshiba Semiconductor
Total Page 4 Pages
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