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Toshiba Electronic Components Datasheet

B1020A Datasheet

2SB1020A

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B1020A pdf
2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
100
5
7
10
0.7
2.0
30
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
5 k
150
Emitter
1 2006-11-21


Toshiba Electronic Components Datasheet

B1020A Datasheet

2SB1020A

No Preview Available !

B1020A pdf
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
IC = 50 mA, IB = 0
VCE = 3 V, IC = 3 A
VCE = 3 V, IC = 7 A
IC = 3 A, IB = 6 mA
IC = 7 A, IB = 14 mA
IC = 3 A, IB = 6 mA
2SB1020A
Min Typ. Max Unit
100
2000
1000
― −100
― −4.0
――
15000
――
0.95 1.5
1.3 2.0
1.55 2.5
μA
mA
V
V
V
Turn-on time
Switching time Storage time
Fall time
ton
IB2
Output
0.8
Input IB1
tstg
2.0
μs
VCC ≈ −45 V
20 μs
tf
IB1 = IB2 = 6 mA, duty cycle 1%
2.5
Marking
B1020A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21


Part Number B1020A
Description 2SB1020A
Maker Toshiba Semiconductor
Total Page 5 Pages
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