http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Toshiba Electronic Components Datasheet

GT60J322 Datasheet

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

No Preview Available !

GT60J322 pdf
GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation
Soft Switching Applications
Unit: mm
Enhancement-mode
Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Screw torque
DC
1 ms
DC
1 ms
Equivalent Circuit
Symbol
VCES
VGES
IC
ICP
IECF
IECPF
PC
Tj
Tstg
Collector
Gate
Emitter
Rating
600
±25
60
120
60
120
200
150
55~150
0.8
Unit
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2002-01-18


Toshiba Electronic Components Datasheet

GT60J322 Datasheet

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

No Preview Available !

GT60J322 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Symbol
Test Condition
IGES
ICES
VGE = ±25 V, VCE = 0
VCE = 600 V, VGE = 0
VGE (OFF)
VCE (sat) (1)
VCE (sat) (2)
IC = 60 mA, VCE = 5 V
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
Cies VCE = 10 V, VGE = 0, f = 1 MHz
tr
ton
15 V
18
tf 0
15 V
toff
300 V
VF IF = 60 A, VGE = 0
trr IF = 60 A, VGE = 0, di/dt = −100 A/µs
Rth (j-c)
Rth (j-c)
GT60J322
Min Typ. Max Unit
  ±500
  1.0
3.0 6.0
0.95 1.45
1.25 1.65
13500
0.25
nA
mA
V
V
pF
0.35
µs
1.00 1.50
1.50
1.2 1.6 V
0.6 1.0 µs
  0.625 °C/W
  0.96 °C/W
2 2002-01-18


Part Number GT60J322
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Maker Toshiba Semiconductor
Total Page 6 Pages
PDF Download
GT60J322 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 GT60J321 The 4th Generation Soft Switching Applications Toshiba
Toshiba
GT60J321 pdf
2 GT60J322 Insulated Gate Bipolar Transistor Silicon N Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor
GT60J322 pdf
3 GT60J323 Insulated Gate Bipolar Transistor Silicon N Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor
GT60J323 pdf
4 GT60J323H Insulated Gate Bipolar Transistor Silicon N Channel IGBT Toshiba
Toshiba
GT60J323H pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components