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Toshiba Electronic Components Datasheet

K1310A Datasheet

N-CHANNEL MOS TYPE TRANSISTOR

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K1310A pdf
2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z PushPull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDR
PD
Tch
Tstg
100
±20
12
12
250
150
55~150
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
EIAJ
temperature, etc.) may cause this product to decrease in the
TOSHIBA
222C2A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01


Toshiba Electronic Components Datasheet

K1310A Datasheet

N-CHANNEL MOS TYPE TRANSISTOR

No Preview Available !

K1310A pdf
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Output Power
Drain Efficiency
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Drain-Source ON Resistance
Drain-Source ON Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Po
ηD
V (BR) DSS
IDSS
Vth
RDS (on)
VDS (on)
|Yfs|
Ciss
Coss
Crss
VDD = 50 V, Iidle = 0.2 A × 2
Pi = 10 W, f = 230 MHz *
ID = 10 mA, VGS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V **
ID = 4 A, VGS = 10 V **
ID = 3 A, VDS = 20 V **
VDS = 50 V, VGS = 0, f = 1 MHz
VDS = 50 V, VGS = 0, f = 1 MHz
VDS = 50 V, VGS = 0, f = 1 MHz
*: PushPull Operation **: Pulse Test
This transistor is the electrostatic sensitive device. Please handle with caution.
2SK1310A
MIN. TYP. MAX. UNIT
190 220
W
— 65 — %
100 — — V
— — 1.0 mA
0.5 — 3.0 V
— 0.9 1.5
— 3.6 6.0 V
0.9 1.3
S
— 100 —
pF
— 40 — pF
— 1 — pF
2 2007-11-01


Part Number K1310A
Description N-CHANNEL MOS TYPE TRANSISTOR
Maker Toshiba Semiconductor
Total Page 5 Pages
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1 K1310A N-CHANNEL MOS TYPE TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
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