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Toshiba Electronic Components Datasheet

TC74VHC03FT Datasheet

Quad 2-Input NAND Gate

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TC74VHC03FT pdf
TC74VHC03F/FN/FT/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC03F,TC74VHC03FN,TC74VHC03FT,TC74VHC03FK
Quad 2-Input NAND Gate (open drain)
The TC74VHC03 is an advanced high speed CMOS 2-INPUT
NAND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
Pin configuration and function are the same as the
TC74VHC00. But the TC74VHC03 has, as its outputs, high
performance MOS N-channel transistors. (OPEN-DRAIN
outputs) This device can, therefore, with a suitable pull-up
resistors, be used in wired-AND, LED driver and other
application.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Features
High speed: tpZ = 3.7 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Power down protection is provided on all inputs.
Wide operating voltage range: VCC (opr) = 2 to 5.5 V
Low noise: VOLP = 0.8 V (max)
Pin and function compatible with 74ALS03
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHC03F
TC74VHC03FN
TC74VHC03FT
TC74VHC03FK
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
1 2007-10-01


Toshiba Electronic Components Datasheet

TC74VHC03FT Datasheet

Quad 2-Input NAND Gate

No Preview Available !

TC74VHC03FT pdf
Pin Assignment
TC74VHC03F/FN/FT/FK
IEC Logic Symbol
1A 1
1B 2
1Y 3
2A 4
2B 5
2Y 6
GND 7
Truth Table
(top view)
14 VCC
13 4B
12 4A
11 4Y
10 3B
9 3A
8 3Y
ABY
LLZ
LHZ
HLZ
HH L
System Diagram (per gate)
1A (1)
1B (2)
2A (4)
2B (5)
3A (9)
3B (10)
4A (12)
4B (13)
&
(3) 1Y
(6) 2Y
(8) 3Y
(11) 4Y
VCC
Y
A
B
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
Symbol
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
Rating
0.5 to 7.0
0.5 to 7.0
0.5 to VCC + 0.5
20
±20
25
±50
180
65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2 2007-10-01


Part Number TC74VHC03FT
Description Quad 2-Input NAND Gate
Maker Toshiba Semiconductor
Total Page 9 Pages
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