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Toshiba Electronic Components Datasheet

TLP2200 Datasheet

GaAlAs Ired & Photo-IC

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TLP2200 pdf
TOSHIBA Photocoupler GaAAs Ired & Photo-IC
TLP2200
Isolated Buss Driver
High Speed Line Receiver
Microprocessor System Interfaces
MOS FET Gate Driver
Direct Replacement For HCPL2200
TLP2200
Unit in mm
The TOSHIBA TLP2200 consists of a GaAAs light
emitting diode and integrated high gain, high speed
photodetector.
This unit is 8lead DIP package.
The detector has a three state output stage that
eliminates the need for pullup resistor, and builtin
schmitt trigger. The detector IC has an internal shield
that provides a guaranteed common mode transient
immunity of 1000V / μs.
z Input current: IF = 1.6mA
z Power supply voltage: VCC = 4.5~20V
z Switching speed: 2.5MBd guaranteed
z Common mode transient immunity: ±1000V / μs (min.)
z Guaranteed performance over temp: 0~85°C
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file No. E67349
Truth Table (positive logic)
Input
H
L
H
L
Enable
H
H
L
L
Output
Z
Z
H
L
TOSHIBA
1110C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1 VCC
2
3
4 GND
SHIELD
8
1: N.C.
2: Anode
7 3: Cathode
4: N.C.
6 5: GND
5 6: VE (enable)
7: VO (output)
8: VCC
Schematic
IF
2
VF
3
SHIELD
ICC
VCC
IO 8
IE 7 VO
6 VE
GND
5
1 2007-10-01


Toshiba Electronic Components Datasheet

TLP2200 Datasheet

GaAlAs Ired & Photo-IC

No Preview Available !

TLP2200 pdf
TLP2200
Recommended Operating Conditions
Characteristic
Symbol Min. Typ. Max. Unit
Input current, on
Input current, off
Supply voltage
Enable voltage high
Enable voltage low
Fan out (TTL load)
Operating temperature
IF(ON) 1.6
5 mA
IF(OFF) 0 0.1 mA
VCC
4.5
20 V
VEH 2.0 20 V
VEL 0 0.8 V
N
――
4
Topr
0 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Absolute Maximum Ratings (no derating required up to 70°C)
Characteristic
Symbol
Rating
Unit
Forward current
Peak transient forward current
Reverse voltage
Output current
(Note 1)
Supply voltage
Output voltage
Three state enable voltage
Total package power dissipation
(Note 2)
Operating temperature range
Storage temperature range
Lead solder temperature (10s) (**)
Isolation voltage (AC 1min., R.H. 60%,Ta = 25°C)
(Note 3)
IF
IFPT
VR
IO
VCC
VO
VE
PT
Topr
Tstg
Tsol
BVS
10
1
5
25
0.5~20
0.5~20
0.5~20
210
40~85
55~125
260
2500
mA
A
V
mA
V
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width 1μs 300pps.
(Note 2) Derate 4.5mW / °C above 70°C ambient temperature.
(Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted
together
(**) 1.6mm below seating plane.
2 2007-10-01


Part Number TLP2200
Description GaAlAs Ired & Photo-IC
Maker Toshiba Semiconductor
Total Page 7 Pages
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